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2SJ358C-T1-AZ Renesas

r07ds1262ej0300_2sj358c.pdf
Hersteller: Renesas
Description: 2SJ358C-T1-AZ - P-CHANNEL MOS FE
Rds On (Max) @ Id, Vgs: 143mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MP-2
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
auf Bestellung 4101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
358+1.4 EUR
Mindestbestellmenge: 358
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Technische Details 2SJ358C-T1-AZ Renesas

Description: 2SJ358C-T1-AZ - P-CHANNEL MOS FE, Rds On (Max) @ Id, Vgs: 143mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: MP-2, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta).