auf Bestellung 1523 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 190+ | 2.85 EUR |
| 500+ | 2.47 EUR |
| 1000+ | 2.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SJ542-E Renesas
Description: MOSFET N-CH 60V 18A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-220AB, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V.
Weitere Produktangebote 2SJ542-E nach Preis ab 2.99 EUR bis 2.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
2SJ542-E | Hersteller : Renesas Electronics Corporation |
 Description: MOSFET N-CH 60V 18A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220AB Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
auf Bestellung 1523 Stücke: Lieferzeit 10-14 Tag (e) |
|