2SJ635-TL-E ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - 2SJ635-TL-E - 2SJ635 - P-CHANNEL SILICON MOSFET
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1180 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details 2SJ635-TL-E ONSEMI
Description: 2SJ635 - P-CHANNEL SILICON MOSFE, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V, Power Dissipation (Max): 1W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: TP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V.
Weitere Produktangebote 2SJ635-TL-E nach Preis ab 0.65 EUR bis 0.65 EUR
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| 2SJ635-TL-E | Hersteller : onsemi |
Description: 2SJ635 - P-CHANNEL SILICON MOSFE Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V Power Dissipation (Max): 1W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: TP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SJ635-TL-E |
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auf Bestellung 5080 Stücke: Lieferzeit 21-28 Tag (e) |