2SJ652-RA11 onsemi
Hersteller: onsemi
Description: MOSFET P-CH 60V 28A TO220ML
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220ML
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Technische Details 2SJ652-RA11 onsemi
Description: MOSFET P-CH 60V 28A TO220ML, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220ML, Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.