Technische Details 2SJ652 HITACHI
Description: MOSFET P-CH 60V 28A TO220ML, Packaging: Bag, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V, Power Dissipation (Max): 2W (Ta), 30W (Tc), Supplier Device Package: TO-220ML, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V.
Weitere Produktangebote 2SJ652
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 2SJ652 | Hersteller : ON Semiconductor |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2SJ652 | Hersteller : SANYO | 05+ |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2SJ652 | Hersteller : TOSHIBA | TO-220F |
auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SJ652 | Hersteller : onsemi |
Description: MOSFET P-CH 60V 28A TO220ML Packaging: Bag Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Supplier Device Package: TO-220ML Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V |
Produkt ist nicht verfügbar |
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2SJ652 | Hersteller : onsemi |
 MOSFET POWER MOSFET |
Produkt ist nicht verfügbar |