Produkte > TOSHIBA > 2SJ668(TE16L1,NQ)

2SJ668(TE16L1,NQ) TOSHIBA


2SJ668_2010-02-05.pdf
Hersteller: TOSHIBA
SOT252/2.5
auf Bestellung 41 Stücke:

Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SJ668(TE16L1,NQ) TOSHIBA

Description: MOSFET P-CHANNEL 60V 5A PW-MOLD, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: PW-MOLD, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C.

Weitere Produktangebote 2SJ668(TE16L1,NQ)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SJ668(TE16L1,NQ) Hersteller : Toshiba Semiconductor and Storage 2SJ668_2010-02-05.pdf Description: MOSFET P-CHANNEL 60V 5A PW-MOLD
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PW-MOLD
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SJ668(TE16L1,NQ) 2SJ668(TE16L1,NQ) Hersteller : Toshiba 2SJ668_2010-02-05.pdf MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH