Technische Details 2SJ668(TE16L1,NQ) TOSHIBA
Description: MOSFET P-CHANNEL 60V 5A PW-MOLD, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: PW-MOLD, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C.
Weitere Produktangebote 2SJ668(TE16L1,NQ)
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| 2SJ668(TE16L1,NQ) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CHANNEL 60V 5A PW-MOLDMounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: PW-MOLD Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C |
Produkt ist nicht verfügbar |
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2SJ668(TE16L1,NQ) | Hersteller : Toshiba |
MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm |
Produkt ist nicht verfügbar |

