2SK1528STR-E Renesas Electronics Corporation

Description: NCH POWER MOSFET 900V 4A 4000MOH, Supplier Device Package: LDPAK, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-83, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.