2SK1859-E Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 900V 6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V
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Technische Details 2SK1859-E Renesas Electronics Corporation
Description: MOSFET N-CH 900V 6A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V.
Weitere Produktangebote 2SK1859-E
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2SK1859-E | Hersteller : Renesas Electronics |
MOSFET MOSFET - Pb Free |
Produkt ist nicht verfügbar |