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2SK2009TE85LF

2SK2009TE85LF Toshiba Semiconductor and Storage

2SK2009_datasheet_en_20140301.pdf?did=19542&prodName=2SK2009 Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 200MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SK2009TE85LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 200MA SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SC-59-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V.

Weitere Produktangebote 2SK2009TE85LF nach Preis ab 0.29 EUR bis 1.17 EUR

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2SK2009TE85LF 2SK2009TE85LF Hersteller : Toshiba Semiconductor and Storage 2SK2009_datasheet_en_20140301.pdf?did=19542&prodName=2SK2009 Description: MOSFET N-CH 30V 200MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
auf Bestellung 4219 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
24+0.75 EUR
100+0.50 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
2SK2009TE85LF 2SK2009TE85LF Hersteller : Toshiba 2SK2009_datasheet_en_20140301-1132946.pdf MOSFETs N-Ch Sm Sig FET Id 0.2A 30V 20V
auf Bestellung 25869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.17 EUR
10+0.79 EUR
100+0.53 EUR
500+0.42 EUR
1000+0.37 EUR
3000+0.30 EUR
6000+0.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH