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2SK2109-T1-AZ Renesas

2sk2109-data-sheet?language=en
Hersteller: Renesas
Description: 2SK2109-T1-AZ - N-CHANNEL MOS FE
Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: SC-62
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
532+0.85 EUR
Mindestbestellmenge: 532
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Technische Details 2SK2109-T1-AZ Renesas

Description: 2SK2109-T1-AZ - N-CHANNEL MOS FE, Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: SC-62, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 800mOhm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Bulk.