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2SK2157C-T1-AZ Renesas


r07ds1264ej0200_2sk2157c.pdf Hersteller: Renesas
Description: 2SK2157C-T1-AZ - N-CHANNEL MOS F
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 63mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: MP-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
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Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
372+1.97 EUR
Mindestbestellmenge: 372
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Technische Details 2SK2157C-T1-AZ Renesas

Description: 2SK2157C-T1-AZ - N-CHANNEL MOS F, Packaging: Bulk, Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 63mOhm @ 2A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: MP-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V.

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2SK2157C-T1-AZ Hersteller : Renesas Electronics r07ds1264ej0200_2sk2157c.pdf Renesas Electronics
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