| Anzahl | Privatkunde |
|---|---|
| 2130+ | 0.31 EUR |
| 10000+ | 0.27 EUR |
| 100000+ | 0.23 EUR |
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Technische Details 2SK2158A-T1B-AT Renesas
Description: SMALL SIGNAL N-CHANNEL MOSFET, Packaging: Bulk, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 15Ohm @ 10mA, 4V, Power Dissipation (Max): 200mW, Vgs(th) (Max) @ Id: 1.1V @ 1µA, Supplier Device Package: SC-59, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±7V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 6 pF @ 3 V.
Weitere Produktangebote 2SK2158A-T1B-AT nach Preis ab 0.23 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SK2158A-T1B-AT | Renesas |
 Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R |
auf Bestellung 470974 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| 2SK2158A-T1B-AT | Renesas Electronics Corporation |
Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 10mA, 4V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 1.1V @ 1µA Supplier Device Package: SC-59 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 6 pF @ 3 V |
auf Bestellung 659974 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK2158A-T1B-AT |
|
Hersteller: Renesas
Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R
Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R
auf Bestellung 470974 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2130+ | 0.31 EUR |
| 10000+ | 0.27 EUR |
| 100000+ | 0.23 EUR |
| 2SK2158A-T1B-AT |
|
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.1V @ 1µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 6 pF @ 3 V
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.1V @ 1µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 6 pF @ 3 V
auf Bestellung 659974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1413+ | 0.38 EUR |