auf Bestellung 189000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1986+ | 0.28 EUR |
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Technische Details 2SK2158A-T1B-AT Renesas
Description: SMALL SIGNAL N-CHANNEL MOSFET, Packaging: Bulk, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 15Ohm @ 10mA, 4V, Power Dissipation (Max): 200mW, Vgs(th) (Max) @ Id: 1.1V @ 1µA, Supplier Device Package: SC-59, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±7V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 6 pF @ 3 V.
Weitere Produktangebote 2SK2158A-T1B-AT nach Preis ab 0.28 EUR bis 0.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 2SK2158A-T1B-AT | Hersteller : Renesas |
 Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R |
auf Bestellung 473805 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SK2158A-T1B-AT | Hersteller : Renesas Electronics Corporation |
Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 10mA, 4V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 1.1V @ 1µA Supplier Device Package: SC-59 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 6 pF @ 3 V |
auf Bestellung 662805 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SK2158A-T1B-AT | Hersteller : Renesas Electronics |
Renesas Electronics |
Produkt ist nicht verfügbar |