2SK2158A-T1B-AT

2SK2158A-T1B-AT Renesas Electronics Corporation


RNCCS04583-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.1V @ 1µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 6 pF @ 3 V
auf Bestellung 662805 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1623+0.44 EUR
Mindestbestellmenge: 1623
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SK2158A-T1B-AT Renesas Electronics Corporation

Description: SMALL SIGNAL N-CHANNEL MOSFET, Packaging: Bulk, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 15Ohm @ 10mA, 4V, Power Dissipation (Max): 200mW, Vgs(th) (Max) @ Id: 1.1V @ 1µA, Supplier Device Package: SC-59, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±7V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 6 pF @ 3 V.

Weitere Produktangebote 2SK2158A-T1B-AT

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SK2158A-T1B-AT Hersteller : Renesas Electronics RNCCS04583-1.pdf?t.download=true&u=5oefqw Renesas Electronics
Produkt ist nicht verfügbar