2SK2221-E Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 200V 8A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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Technische Details 2SK2221-E Renesas Electronics Corporation
Description: MOSFET N-CH 200V 8A TO3P, Packaging: Tray, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-3P, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V.
Weitere Produktangebote 2SK2221-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SK2221-E | Hersteller : Renesas Electronics |
MOSFET 8A, 200V, TO-3P |
Produkt ist nicht verfügbar |