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2SK2857-T1-AZ Renesas


d11648ej2v0ds00.pdf Hersteller: Renesas
Description: 2SK2857-T1-AZ - N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-62
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 10 V
auf Bestellung 14621 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
606+1.2 EUR
Mindestbestellmenge: 606
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Technische Details 2SK2857-T1-AZ Renesas

Description: 2SK2857-T1-AZ - N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SC-62, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 10 V.

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2SK2857-T1-AZ Hersteller : NEC d11648ej2v0ds00.pdf
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)