2SK2993(TE24L,Q) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 250V 20A TO220SM, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SM, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).