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2SK3403(Q) Toshiba


2SK3403.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 450V 13A 3-Pin(3+Tab) TO-220FL
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Lieferzeit 14-21 Tag (e)
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48+3.27 EUR
50+ 3.04 EUR
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Technische Details 2SK3403(Q) Toshiba

Description: MOSFET N-CH 450V 13A TO220FL, Packaging: Bulk, Package / Case: TO-220-3, Short Tab, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 450 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.

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2SK3403(Q) 2SK3403(Q) Hersteller : Toshiba Semiconductor and Storage 2SK3403.pdf Description: MOSFET N-CH 450V 13A TO220FL
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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2SK3403 (Q) 2SK3403 (Q) Hersteller : Toshiba 2SK2231_datasheet_en_20100205-1133913.pdf MOSFET
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