2SK3447TZ-E Renesas

Description: 2SK3447TZ-E - SILICON N CHANNEL, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: TO-92MOD, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body.