Produktrezensionen
Produktbewertung abgeben
Technische Details 2SK3447TZ-E Renesas
Description: 2SK3447TZ-E - SILICON N CHANNEL, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: TO-92MOD, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body.
Weitere Produktangebote 2SK3447TZ-E nach Preis ab 0.73 EUR bis 1.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
2SK3447TZ-E | Renesas |
 Trans MOSFET N-CH Si 150V 1A 3-Pin TO-92 Mod T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
| 2SK3447TZ-E | Renesas |
Description: 2SK3447TZ-E - SILICON N CHANNEL Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: TO-92MOD Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body |
auf Bestellung 8166 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK3447TZ-E |
|
Hersteller: Renesas
Trans MOSFET N-CH Si 150V 1A 3-Pin TO-92 Mod T/R
Trans MOSFET N-CH Si 150V 1A 3-Pin TO-92 Mod T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 841+ | 0.79 EUR |
| 1000+ | 0.73 EUR |
| 2SK3447TZ-E |
|
Hersteller: Renesas
Description: 2SK3447TZ-E - SILICON N CHANNEL
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Description: 2SK3447TZ-E - SILICON N CHANNEL
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
auf Bestellung 8166 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 496+ | 1.11 EUR |