Technische Details 2SK3484-AZ NEC
Description: MOSFET N-CH 100V 16A TO251, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V, Power Dissipation (Max): 1W (Ta), 30W (Tc), Supplier Device Package: TO-251, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V.
Weitere Produktangebote 2SK3484-AZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
2SK3484-AZ | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 16A TO251Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V Power Dissipation (Max): 1W (Ta), 30W (Tc) Supplier Device Package: TO-251 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
Produkt ist nicht verfügbar |
|
|
2SK3484-AZ | Hersteller : Renesas Electronics |
MOSFET POWER TRANSISTOR |
Produkt ist nicht verfügbar |


