auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 1 EUR |
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Technische Details 2SK3566(STA4,Q,M) Toshiba
Description: MOSFET N-CH 900V 2.5A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 6.4Ohm @ 1.5A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V.
Weitere Produktangebote 2SK3566(STA4,Q,M) nach Preis ab 1 EUR bis 3.9 EUR
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2SK3566(STA4,Q,M) | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 900V 2.5A 3-Pin(3+Tab) TO-220SIS |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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2SK3566(STA4,Q,M) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 900V 2.5A 3-Pin(3+Tab) TO-220SIS |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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2SK3566(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.5A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.5A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 5.6Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 306 Stücke: Lieferzeit 7-14 Tag (e) |
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2SK3566(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.5A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.5A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 5.6Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 306 Stücke: Lieferzeit 14-21 Tag (e) |
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2SK3566(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 900V 2.5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 6.4Ohm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
auf Bestellung 1083 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3566(STA4,Q,M) | Hersteller : Toshiba |
MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm |
auf Bestellung 756 Stücke: Lieferzeit 14-28 Tag (e) |
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2SK3566(STA4,Q,M) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 900V 2.5A 3-Pin(3+Tab) TO-220SIS |
auf Bestellung 796 Stücke: Lieferzeit 14-21 Tag (e) |