2SK3614-Q-TD-E ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SK3614-Q-TD-E - 2SK3614 - N-CHANNEL 4V DRIVE SERIES
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SK3614-Q-TD-E ONSEMI
Description: NCH 4V DRIVE SERIES, Packaging: Bulk, Part Status: Active, Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V, Rds On (Max) @ Id, Vgs: 145mOhm @ 2A, 10V, Power Dissipation (Max): 1.5W (Ta), 3.5W (Tc), Supplier Device Package: PCP.
Weitere Produktangebote 2SK3614-Q-TD-E nach Preis ab 0.51 EUR bis 0.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| 2SK3614-Q-TD-E | onsemi |
Description: NCH 4V DRIVE SERIES Packaging: Bulk Part Status: Active Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V Rds On (Max) @ Id, Vgs: 145mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 3.5W (Tc) Supplier Device Package: PCP |
auf Bestellung 30640 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK3614-Q-TD-E |
|
Hersteller: onsemi
Description: NCH 4V DRIVE SERIES
Packaging: Bulk
Part Status: Active
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 3.5W (Tc)
Supplier Device Package: PCP
Description: NCH 4V DRIVE SERIES
Packaging: Bulk
Part Status: Active
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 3.5W (Tc)
Supplier Device Package: PCP
auf Bestellung 30640 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1069+ | 0.51 EUR |