2SK3614-Q-TD-E onsemi
Hersteller: onsemiDescription: NCH 4V DRIVE SERIES
Packaging: Bulk
Part Status: Active
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 3.5W (Tc)
Supplier Device Package: PCP
auf Bestellung 32680 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1285+ | 0.36 EUR |
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Technische Details 2SK3614-Q-TD-E onsemi
Description: NCH 4V DRIVE SERIES, Packaging: Bulk, Part Status: Active, Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V, Rds On (Max) @ Id, Vgs: 145mOhm @ 2A, 10V, Power Dissipation (Max): 1.5W (Ta), 3.5W (Tc), Supplier Device Package: PCP.
Weitere Produktangebote 2SK3614-Q-TD-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2SK3614-Q-TD-E | Hersteller : ONSEMI |
Description: ONSEMI - 2SK3614-Q-TD-E - 2SK3614 - N-CHANNEL 4V DRIVE SERIES tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 19000 Stücke: Lieferzeit 14-21 Tag (e) |