2SK3700(F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 900V 5A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.91 EUR |
| 10+ | 3.24 EUR |
| 25+ | 3.14 EUR |
| 100+ | 2.58 EUR |
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Technische Details 2SK3700(F) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 5A TO3P, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P(N), Part Status: Active, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V.
Weitere Produktangebote 2SK3700(F) nach Preis ab 2.6 EUR bis 5.77 EUR
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2SK3700(F) | Hersteller : Toshiba |
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auf Bestellung 141 Stücke: Lieferzeit 14-28 Tag (e) |
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2SK3700(F) | Hersteller : Toshiba |
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2SK3700(F) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 900V 5A 3-Pin(3+Tab) TO-3PN |
Produkt ist nicht verfügbar |