2SK3746 Sanyo
Hersteller: Sanyo
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Supplier Device Package: TO-3PB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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Technische Details 2SK3746 Sanyo
Description: MOSFET N-CH 1500V 2A TO3PB, Package / Case: TO-3P-3, SC-65-3, Packaging: Tray, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V, Drain to Source Voltage (Vdss): 1500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3PB, Power Dissipation (Max): 2.5W (Ta), 110W (Tc), Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole.
Weitere Produktangebote 2SK3746 nach Preis ab 6.66 EUR bis 6.66 EUR
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2SK3746 | onsemi |
Description: MOSFET N-CH 1500V 2A TO3PB Package / Case: TO-3P-3, SC-65-3 Packaging: Tray Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Drain to Source Voltage (Vdss): 1500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PB Power Dissipation (Max): 2.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole |
auf Bestellung 2645 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK3746 |
|
Hersteller: onsemi
Description: MOSFET N-CH 1500V 2A TO3PB
Package / Case: TO-3P-3, SC-65-3
Packaging: Tray
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PB
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 1500V 2A TO3PB
Package / Case: TO-3P-3, SC-65-3
Packaging: Tray
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PB
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 2645 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 6.66 EUR |