auf Bestellung 716 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.08 EUR |
| 10+ | 8.48 EUR |
| 25+ | 8.32 EUR |
| 100+ | 6.86 EUR |
| 250+ | 6.74 EUR |
| 500+ | 6.44 EUR |
| 800+ | 4.89 EUR |
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Technische Details 2SK3812-ZP-E1-AZ Renesas Electronics
Description: MP-25LZP, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V, Power Dissipation (Max): 1.5W (Ta), 213W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V.
Weitere Produktangebote 2SK3812-ZP-E1-AZ nach Preis ab 5.67 EUR bis 11.56 EUR
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2SK3812-ZP-E1-AZ | Hersteller : Renesas Electronics Corporation |
 Description: MP-25LZPPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V |
auf Bestellung 1357 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3812-ZP-E1-AZ | Hersteller : Renesas Electronics Corporation |
Description: MP-25LZP Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V |
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