| Anzahl | Preis |
|---|---|
| 1+ | 9.13 EUR |
| 10+ | 7.67 EUR |
| 25+ | 7.53 EUR |
| 100+ | 6.21 EUR |
| 250+ | 6.11 EUR |
| 500+ | 5.83 EUR |
| 800+ | 4.44 EUR |
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Technische Details 2SK3812-ZP-E1-AZ Renesas Electronics
Description: MP-25LZP, Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263-3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.5W (Ta), 213W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SK3812-ZP-E1-AZ nach Preis ab 5.67 EUR bis 11.56 EUR
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2SK3812-ZP-E1-AZ | Renesas Electronics Corporation |
 Description: MP-25LZPDrain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
auf Bestellung 1357 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SK3812-ZP-E1-AZ |
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Hersteller: Renesas Electronics Corporation
Description: MP-25LZP
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Description: MP-25LZP
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
auf Bestellung 1357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.56 EUR |
| 10+ | 7.8 EUR |
| 100+ | 5.67 EUR |