2SK3816-DL-E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 40A SMP-FD
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: SMP-FD
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Technische Details 2SK3816-DL-E onsemi
Description: MOSFET N-CH 60V 40A SMP-FD, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: SMP-FD, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1.65W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.
