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2SK3899(0)-ZK-E1-AY Renesas


Hersteller: Renesas
Description: 2SK3899K - Nch Single Power Mosf
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 42A, 10V
Power Dissipation (Max): 1.5W (Ta) , 146W (Tc)
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Technische Details 2SK3899(0)-ZK-E1-AY Renesas

Description: 2SK3899K - Nch Single Power Mosf, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-263-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V, Rds On (Max) @ Id, Vgs: 5.3mOhm @ 42A, 10V, Power Dissipation (Max): 1.5W (Ta) , 146W (Tc).

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2SK3899(0)-ZK-E1-AY Hersteller : Renesas Electronics Renesas Electronics
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