2SK4150TZ-E Renesas
Hersteller: RenesasDescription: 2SK4150TZ - N-CHANNEL POWER MOSF
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
auf Bestellung 19000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 475+ | 1.04 EUR |
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Technische Details 2SK4150TZ-E Renesas
Description: 2SK4150TZ - N-CHANNEL POWER MOSF, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TO-92, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V.
Weitere Produktangebote 2SK4150TZ-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SK4150TZ-E | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 250V 400MA TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V Power Dissipation (Max): 750mW (Ta) Supplier Device Package: TO-92 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK4150TZ-E | Hersteller : Renesas Electronics |
MOSFET MOSFET |
Produkt ist nicht verfügbar |