2SK4221 Sanyo
Hersteller: Sanyo
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3PB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2.25 pF @ 30 V
| Anzahl | Preis |
|---|---|
| 24+ | 18.99 EUR |
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Technische Details 2SK4221 Sanyo
Description: MOSFET N-CH 500V 26A TO3PB, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3PB, Power Dissipation (Max): 2.5W (Ta), 220W (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tray.
Weitere Produktangebote 2SK4221 nach Preis ab 18.99 EUR bis 18.99 EUR
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2SK4221 | onsemi |
Description: MOSFET N-CH 500V 26A TO3PB Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PB Power Dissipation (Max): 2.5W (Ta), 220W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tray |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK4221 |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 26A TO3PB
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PB
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tray
Description: MOSFET N-CH 500V 26A TO3PB
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PB
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tray
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 18.99 EUR |