2SK879-Y(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: JFET N-CH 0.1W USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.19 EUR |
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Technische Details 2SK879-Y(TE85L,F) Toshiba Semiconductor and Storage
Description: JFET N-CH 0.1W USM, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 125°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V, Supplier Device Package: USM, Part Status: Active, Power - Max: 100 mW, Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA, Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V.
Weitere Produktangebote 2SK879-Y(TE85L,F) nach Preis ab 0.20 EUR bis 0.90 EUR
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2SK879-Y(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: JFET N-CH 0.1W USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Supplier Device Package: USM Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
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