3.0SMCJ18A-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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Technische Details 3.0SMCJ18A-AU_R1_000A1 PanJit Semiconductor
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 3kW, Max. off-state voltage: 18V, Breakdown voltage: 20...23.3V, Max. forward impulse current: 102.8A, Semiconductor structure: unidirectional, Case: SMC, Mounting: SMD, Leakage current: 1µA, Manufacturer series: 3.0SMCJ, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Application: automotive industry.