3.0SMCJ54CA-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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Technische Details 3.0SMCJ54CA-AU_R1_000A1 PanJit Semiconductor
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 3kW, Max. off-state voltage: 54V, Breakdown voltage: 60...69V, Max. forward impulse current: 34.4A, Semiconductor structure: bidirectional, Case: SMC, Mounting: SMD, Leakage current: 3µA, Manufacturer series: 3.0SMCJ, Features of semiconductor devices: glass passivated, Application: automotive industry, Kind of package: reel; tape.