Technische Details 30A01C-TB-E ON Semiconductor
Description: TRANS PNP 30V 0.3A 3-CP, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 300 mA, Supplier Device Package: 3-CP, Frequency - Transition: 520MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 220mV @ 5mA, 100mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, Power - Max: 300 mW.
Weitere Produktangebote 30A01C-TB-E nach Preis ab 0.12 EUR bis 0.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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30A01C-TB-E | ON Semiconductor |
 Trans GP BJT PNP 30V 0.3A 300mW 3-Pin Case CP |
auf Bestellung 279000 Stücke: Lieferzeit 14-21 Tag (e) |
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30A01C-TB-E | Sanyo |
Description: TRANS PNP 30V 0.3A 3-CP Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: 3-CP Frequency - Transition: 520MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 220mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Power - Max: 300 mW |
auf Bestellung 288000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 30A01C-TB-E |
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Hersteller: ON Semiconductor
Trans GP BJT PNP 30V 0.3A 300mW 3-Pin Case CP
Trans GP BJT PNP 30V 0.3A 300mW 3-Pin Case CP
auf Bestellung 279000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3912+ | 0.17 EUR |
| 10000+ | 0.14 EUR |
| 100000+ | 0.12 EUR |
| 30A01C-TB-E |
|
Hersteller: Sanyo
Description: TRANS PNP 30V 0.3A 3-CP
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: 3-CP
Frequency - Transition: 520MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 300 mW
Description: TRANS PNP 30V 0.3A 3-CP
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: 3-CP
Frequency - Transition: 520MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 300 mW
auf Bestellung 288000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2597+ | 0.21 EUR |