
30C02CH-TL-E ONSEMI

Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.7A; 0.7W; SOT23,TO236AB
Collector-emitter voltage: 30V
Current gain: 300...800
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 540MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7375 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
380+ | 0.19 EUR |
545+ | 0.13 EUR |
605+ | 0.12 EUR |
760+ | 0.09 EUR |
805+ | 0.09 EUR |
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Technische Details 30C02CH-TL-E ONSEMI
Description: TRANS NPN 30V 0.7A 3-CPH, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V, Frequency - Transition: 540MHz, Supplier Device Package: 3-CPH, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 700 mW.
Weitere Produktangebote 30C02CH-TL-E nach Preis ab 0.09 EUR bis 0.67 EUR
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30C02CH-TL-E | Hersteller : ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.7A; 0.7W; SOT23,TO236AB Collector-emitter voltage: 30V Current gain: 300...800 Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.7W Polarisation: bipolar Kind of package: reel; tape Case: SOT23; TO236AB Mounting: SMD Frequency: 540MHz |
auf Bestellung 7375 Stücke: Lieferzeit 14-21 Tag (e) |
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30C02CH-TL-E | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Frequency - Transition: 540MHz Supplier Device Package: 3-CPH Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 700 mW |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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30C02CH-TL-E | Hersteller : ON Semiconductor |
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auf Bestellung 7754 Stücke: Lieferzeit 10-14 Tag (e) |
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30C02CH-TL-E | Hersteller : ON Semiconductor |
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auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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30C02CH-TL-E | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Frequency - Transition: 540MHz Supplier Device Package: 3-CPH Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 700 mW |
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