30C02MH-TL-E onsemi
Hersteller: onsemi
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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Technische Details 30C02MH-TL-E onsemi
Description: TRANS NPN 30V 0.7A 3-MCPH, Power - Max: 600 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 700 mA, Part Status: Active, Supplier Device Package: 3-MCPH, Frequency - Transition: 540MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote 30C02MH-TL-E nach Preis ab 0.2 EUR bis 1.05 EUR
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30C02MH-TL-E | onsemi |
Bipolar Transistors - BJT BIP NPN 0.7A 30V |
auf Bestellung 4868 Stücke: Lieferzeit 10-14 Tag (e) |
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30C02MH-TL-E | onsemi |
Description: TRANS NPN 30V 0.7A 3-MCPH Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 700 mA Part Status: Active Supplier Device Package: 3-MCPH Frequency - Transition: 540MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 7447 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 30C02MH-TL-E |
|
Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 0.7A 30V
Bipolar Transistors - BJT BIP NPN 0.7A 30V
auf Bestellung 4868 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.02 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| 30C02MH-TL-E |
|
Hersteller: onsemi
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 7447 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |