30KP66CA MDE Semiconductor Inc
Hersteller: MDE Semiconductor IncDescription: TVS DIODE 66VWM 107VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 283.2A
Voltage - Reverse Standoff (Typ): 66V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 73.7V
Voltage - Clamping (Max) @ Ipp: 107V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 28.12 EUR |
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Technische Details 30KP66CA MDE Semiconductor Inc
Description: TVS DIODE 66VWM 107VC P600, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 283.2A, Voltage - Reverse Standoff (Typ): 66V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 73.7V, Voltage - Clamping (Max) @ Ipp: 107V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.
Weitere Produktangebote 30KP66CA
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 30KP66CA | Hersteller : Rectron |
TVS,R6,30000W,10%,Bidir |
Produkt ist nicht verfügbar |
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30KP66CA | Hersteller : CDIL |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 73.7V; 283.2A; bidirectional; R6; 30kW; bulk Type of diode: TVS Max. off-state voltage: 66V Breakdown voltage: 73.7V Max. forward impulse current: 283.2A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
