31GF6-M3/73 Vishay General Semiconductor
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.85 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.37 EUR |
| 5000+ | 0.35 EUR |
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Technische Details 31GF6-M3/73 Vishay General Semiconductor
Description: DIODE GEN PURP 600V 3A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Current - Reverse Leakage @ Vr: 20 µA @ 600 V.
Weitere Produktangebote 31GF6-M3/73
| Foto | Bezeichnung | Hersteller | Beschreibung |
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31GF6-M3/73 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 3A DO201ADPackaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
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