3LN01C-TB-H

3LN01C-TB-H

3LN01C-TB-H

Hersteller: ON Semiconductor
MOSFET SWITCHING DEVICE
3LN01C-D-105621.pdf
verfügbar/auf Bestellung
auf Bestellung 10476 Stücke
Lieferzeit 14-28 Tag (e)

48+ 1.08 EUR
75+ 0.7 EUR
173+ 0.3 EUR
1000+ 0.23 EUR
3000+ 0.17 EUR

Technische Details 3LN01C-TB-H

Description: MOSFET N-CH 30V 150MA 3CP, Supplier Device Package: 3-CP, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Power - Max: 250mW, Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V, Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), Drain to Source Voltage (Vdss): 30V, FET Feature: Logic Level Gate, 2.5V Drive, FET Type: MOSFET N-Channel, Metal Oxide.

Preis 3LN01C-TB-H ab 0.17 EUR bis 1.08 EUR

3LN01C-TB-H
Hersteller: SONYO
SOT23
3LN01C-D.PDF
3000 Stücke
3LN01C-TB-H
3LN01C-TB-H
Hersteller: ON Semiconductor
Description: MOSFET N-CH 30V 150MA 3CP
Supplier Device Package: 3-CP
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate, 2.5V Drive
FET Type: MOSFET N-Channel, Metal Oxide
3LN01C-D.PDF
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