3LN01C-TB-H onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA 3CP
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: SC-59-3/CP3
| Anzahl | Preis |
|---|---|
| 2597+ | 0.18 EUR |
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Technische Details 3LN01C-TB-H onsemi
Description: MOSFET N-CH 30V 150MA 3CP, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V, Power Dissipation (Max): 250mW (Ta), Supplier Device Package: SC-59-3/CP3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V.
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