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3LP01C-TB-E

3LP01C-TB-E onsemi


3LP01C.pdf Hersteller: onsemi
Description: MOSFET P-CH 30V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 10.4Ohm @ 50mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.5 pF @ 10 V
auf Bestellung 175000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3806+0.13 EUR
Mindestbestellmenge: 3806
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Technische Details 3LP01C-TB-E onsemi

Description: MOSFET P-CH 30V 100MA 3CP, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 10.4Ohm @ 50mA, 4V, Power Dissipation (Max): 250mW (Ta), Supplier Device Package: SC-59-3/CP3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7.5 pF @ 10 V.

Weitere Produktangebote 3LP01C-TB-E

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3LP01C-TB-E Hersteller : SANYO 3LP01C.pdf SOT23
auf Bestellung 7200 Stücke:
Lieferzeit 21-28 Tag (e)
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3LP01C-TB-E Hersteller : ONSEMI ONSMS35153-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 3LP01C-TB-E - 3LP01C-TB-E, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 28421 Stücke:
Lieferzeit 14-21 Tag (e)
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3LP01C-TB-E 3LP01C-TB-E Hersteller : onsemi 3LP01C.pdf Description: MOSFET P-CH 30V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 10.4Ohm @ 50mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.5 pF @ 10 V
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3LP01C-TB-E 3LP01C-TB-E Hersteller : onsemi ONSMS35153_1-2560261.pdf MOSFETs NCH 1.5V DRIVE SERIES
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