3LP01C-TB-E onsemi
Hersteller: onsemi
Description: MOSFET P-CH 30V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 10.4Ohm @ 50mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.5 pF @ 10 V
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Technische Details 3LP01C-TB-E onsemi
Description: MOSFET P-CH 30V 100MA 3CP, Input Capacitance (Ciss) (Max) @ Vds: 7.5 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Supplier Device Package: SC-59-3/CP3, Power Dissipation (Max): 250mW (Ta), Rds On (Max) @ Id, Vgs: 10.4Ohm @ 50mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote 3LP01C-TB-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 3LP01C-TB-E | SANYO |
SOT23 |
auf Bestellung 7200 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 3LP01C-TB-E |
|
Hersteller: SANYO
SOT23
SOT23
auf Bestellung 7200 Stücke:
Lieferzeit 21-28 Tag (e)