45P40

45P40 Goford Semiconductor


45P40.pdf
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.49 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 45P40 Goford Semiconductor

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -45A; 80W; TO252, Gate-source voltage: ±20V, Kind of channel: enhancement, Type of transistor: P-MOSFET, Mounting: SMD, Case: TO252, Technology: Trench, Polarisation: unipolar, Drain current: -45A, Drain-source voltage: -40V, Gate charge: 60nC, Power dissipation: 80W.

Weitere Produktangebote 45P40 nach Preis ab 0.31 EUR bis 2.13 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
45P40 45P40 Hersteller : Goford Semiconductor 45P40.pdf Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
auf Bestellung 3240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
14+1.35 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
45P40 Hersteller : GOFORD Semiconductor 45P40.pdf P-CH -40V -45A 14mOhm/MAX at -10V TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.31 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
45P40 Hersteller : GOFORD SEMICONDUCTOR 45P40.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -45A; 80W; TO252
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: TO252
Technology: Trench
Polarisation: unipolar
Drain current: -45A
Drain-source voltage: -40V
Gate charge: 60nC
Power dissipation: 80W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH