4MN10CH-TL-E onsemi
Hersteller: onsemi
Description: BIP NPN 0.1A 200V
Supplier Device Package: 3-CPH
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 100mA
Power - Max: 600mW
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Bulk
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Technische Details 4MN10CH-TL-E onsemi
Description: BIP NPN 0.1A 200V, Supplier Device Package: 3-CPH, Frequency - Transition: 400MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V, Voltage - Collector Emitter Breakdown (Max): 200V, Current - Collector (Ic) (Max): 100mA, Power - Max: 600mW, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Bulk.

