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| Anzahl | Preis |
|---|---|
| 1+ | 74.18 EUR |
| 10+ | 68.8 EUR |
| 26+ | 66.32 EUR |
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Technische Details 5962-8866205NA Renesas Electronics
Description: IC SRAM 256KBIT PARALLEL 28CDIP, Packaging: Tube, Package / Case: 28-CDIP (0.300", 7.62mm), Mounting Type: Through Hole, Memory Size: 256Kbit, Memory Type: Volatile, Operating Temperature: -55°C ~ 125°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: SRAM - Synchronous, Memory Format: SRAM, Supplier Device Package: 28-CDIP, Write Cycle Time - Word, Page: 35ns, Memory Interface: Parallel, Access Time: 35 ns, Memory Organization: 32K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote 5962-8866205NA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 5962-8866205NA | Hersteller : E2V Aerospace and Defense(Teledyne) |
 SRAM Chip Async Single 5V 256K-bit 32K x 8 35ns 28-Pin CDIP |
Produkt ist nicht verfügbar |
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| 5962-8866205NA | Hersteller : Renesas Electronics Corporation |
Description: IC SRAM 256KBIT PARALLEL 28CDIP Packaging: Tube Package / Case: 28-CDIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Synchronous Memory Format: SRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |