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5HN01M-TL-E-SA Sanyo


SSCLS02074-1.pdf?t.download=true&u=5oefqw
Hersteller: Sanyo
Description: MOSFET N-CH 50V 100MA MCP
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: MCP
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Technische Details 5HN01M-TL-E-SA Sanyo

Description: MOSFET N-CH 50V 100MA MCP, Vgs(th) (Max) @ Id: 2.4V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: MCP.