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5HN01M-TL-H

5HN01M-TL-H onsemi


5HN01M.pdf Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3MCP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: MCP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
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Anzahl Preis
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Technische Details 5HN01M-TL-H onsemi

Description: MOSFET N-CH 50V 100MA 3MCP, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V, Power Dissipation (Max): 150mW (Ta), Supplier Device Package: MCP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V.

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5HN01M-TL-H 5HN01M-TL-H Hersteller : ON Semiconductor 5HN01M.pdf MOSFET NCH 4V DRIVE SERIES
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5HN01M-TL-H 5HN01M-TL-H Hersteller : onsemi 5HN01M.pdf Description: MOSFET N-CH 50V 100MA 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: MCP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH