5HN01M-TL-H onsemi
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3MCP
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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Technische Details 5HN01M-TL-H onsemi
Description: MOSFET N-CH 50V 100MA 3MCP, Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: MCP, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote 5HN01M-TL-H
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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5HN01M-TL-H | ON Semiconductor |
MOSFET NCH 4V DRIVE SERIES |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 5HN01M-TL-H |
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Hersteller: ON Semiconductor
MOSFET NCH 4V DRIVE SERIES
MOSFET NCH 4V DRIVE SERIES
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)