Technische Details 5LP01C-TB-E ON Semiconductor
Description: MOSFET P-CH 50V 70MA 3CP, Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Supplier Device Package: SC-59-3/CP3, Power Dissipation (Max): 250mW (Ta), Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V, Current - Continuous Drain (Id) @ 25°C: 70mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote 5LP01C-TB-E nach Preis ab 0.14 EUR bis 1.24 EUR
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5LP01C-TB-E | ON Semiconductor |
 Trans MOSFET P-CH Si 50V 0.07A 3-Pin SC-59 T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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5LP01C-TB-E | onsemi |
Description: MOSFET P-CH 50V 70MA 3CP Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V Power Dissipation (Max): 250mW (Ta) Supplier Device Package: SC-59-3/CP3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V |
auf Bestellung 42500 Stücke: Lieferzeit 10-14 Tag (e) |
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5LP01C-TB-E | onsemi |
MOSFETs NCH 1.5V DRIVE SERIES |
auf Bestellung 2272 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH Si 50V 0.07A 3-Pin SC-59 T/R
Trans MOSFET P-CH Si 50V 0.07A 3-Pin SC-59 T/R
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3912+ | 0.17 EUR |
| 10000+ | 0.14 EUR |
| 5LP01C-TB-E |
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Hersteller: onsemi
Description: MOSFET P-CH 50V 70MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Description: MOSFET P-CH 50V 70MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2597+ | 0.21 EUR |
| 5LP01C-TB-E |
|
Hersteller: onsemi
MOSFETs NCH 1.5V DRIVE SERIES
MOSFETs NCH 1.5V DRIVE SERIES
auf Bestellung 2272 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.24 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |