Produkte > ONSEMI > 5LP01S-TL-E
5LP01S-TL-E

5LP01S-TL-E onsemi


EN6666-D.PDF Hersteller: onsemi
Description: 5LP01S - P-CHANNEL SMALL SIGNAL
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: SMCP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 10 V
auf Bestellung 51473 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3410+0.21 EUR
Mindestbestellmenge: 3410
Produktrezensionen
Produktbewertung abgeben

Technische Details 5LP01S-TL-E onsemi

Description: 5LP01S - P-CHANNEL SMALL SIGNAL, Packaging: Bulk, Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 70mA (Ta), Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V, Power Dissipation (Max): 150mW (Ta), Supplier Device Package: SMCP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 10 V.

Weitere Produktangebote 5LP01S-TL-E

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
5LP01S-TL-E 5LP01S-TL-E Hersteller : ON Semiconductor EN6666-D-256441.pdf MOSFET NCH 1.5V DRIVE SERIES
auf Bestellung 2202 Stücke:
Lieferzeit 14-28 Tag (e)
5LP01S-TL-E 5LP01S-TL-E Hersteller : onsemi 5LP01S.pdf Description: MOSFET P-CH 50V 70MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: SMCP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Produkt ist nicht verfügbar