5SNA 1000G650300 ABB

Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Case: HIPAK
Semiconductor structure: common emitter; common gate; transistor/transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3
Gate-emitter voltage: ±20V
Max. off-state voltage: 6.5kV
Collector current: 1kA
Pulsed collector current: 2kA
Anzahl je Verpackung: 1 Stücke
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Technische Details 5SNA 1000G650300 ABB
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common gate,common emitter, Case: HIPAK, Semiconductor structure: common emitter; common gate; transistor/transistor, Electrical mounting: screw, Mechanical mounting: screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge x3, Gate-emitter voltage: ±20V, Max. off-state voltage: 6.5kV, Collector current: 1kA, Pulsed collector current: 2kA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 5SNA 1000G650300
Foto | Bezeichnung | Hersteller | Beschreibung |
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5SNA 1000G650300 | Hersteller : ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Case: HIPAK Semiconductor structure: common emitter; common gate; transistor/transistor Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3 Gate-emitter voltage: ±20V Max. off-state voltage: 6.5kV Collector current: 1kA Pulsed collector current: 2kA |
Produkt ist nicht verfügbar |