5SND 0800M170100 ABB

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1.7kV; HIPAK
Mechanical mounting: screw
Case: HIPAK
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
Max. off-state voltage: 1.7kV
Topology: IGBT x2
Electrical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
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Technische Details 5SND 0800M170100 ABB
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1.7kV; HIPAK, Mechanical mounting: screw, Case: HIPAK, Type of semiconductor module: IGBT, Gate-emitter voltage: ±20V, Collector current: 800A, Pulsed collector current: 1.6kA, Max. off-state voltage: 1.7kV, Topology: IGBT x2, Electrical mounting: screw, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 1 Stücke.
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5SND 0800M170100 | Hersteller : ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1.7kV; HIPAK Mechanical mounting: screw Case: HIPAK Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Collector current: 800A Pulsed collector current: 1.6kA Max. off-state voltage: 1.7kV Topology: IGBT x2 Electrical mounting: screw Semiconductor structure: transistor/transistor |
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