5SND 0800M170100 ABB

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1.7kV; HIPAK
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.7kV
Topology: IGBT x2
Case: HIPAK
Pulsed collector current: 1.6kA
Type of semiconductor module: IGBT
Collector current: 800A
Anzahl je Verpackung: 1 Stücke
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Technische Details 5SND 0800M170100 ABB
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1.7kV; HIPAK, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Electrical mounting: screw, Mechanical mounting: screw, Max. off-state voltage: 1.7kV, Topology: IGBT x2, Case: HIPAK, Pulsed collector current: 1.6kA, Type of semiconductor module: IGBT, Collector current: 800A, Anzahl je Verpackung: 1 Stücke.
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5SND 0800M170100 | Hersteller : ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1.7kV; HIPAK Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 1.7kV Topology: IGBT x2 Case: HIPAK Pulsed collector current: 1.6kA Type of semiconductor module: IGBT Collector current: 800A |
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