5SNE 1000E330300 ABB

Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Case: HIPAK
Topology: boost chopper; buck chopper
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 3.3kV
Anzahl je Verpackung: 1 Stücke
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Technische Details 5SNE 1000E330300 ABB
Category: IGBT modules, Description: Module: IGBT; diode/transistor,common gate,common emitter, Type of semiconductor module: IGBT, Semiconductor structure: common emitter; common gate; diode/transistor, Case: HIPAK, Topology: boost chopper; buck chopper, Electrical mounting: screw, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 1kA, Pulsed collector current: 2kA, Max. off-state voltage: 3.3kV, Anzahl je Verpackung: 1 Stücke.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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5SNE 1000E330300 | Hersteller : ABB |
![]() Description: Module: IGBT; diode/transistor,common gate,common emitter Type of semiconductor module: IGBT Semiconductor structure: common emitter; common gate; diode/transistor Case: HIPAK Topology: boost chopper; buck chopper Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 1kA Pulsed collector current: 2kA Max. off-state voltage: 3.3kV |
Produkt ist nicht verfügbar |