
60N06 Goford Semiconductor

Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
auf Bestellung 2410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
11+ | 1.74 EUR |
17+ | 1.09 EUR |
100+ | 0.72 EUR |
500+ | 0.56 EUR |
1000+ | 0.5 EUR |
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Technische Details 60N06 Goford Semiconductor
N-CH,60V,60A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1V to 2V,TO-252.
Weitere Produktangebote 60N06 nach Preis ab 0.23 EUR bis 0.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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60N06 | Hersteller : GOFORD Semiconductor |
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auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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60N06 | Hersteller : IR |
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auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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60N06 | Hersteller : N/A |
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auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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60N06 | Hersteller : Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V |
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