60N06 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.03 EUR |
| 17+ | 1.26 EUR |
| 50+ | 0.93 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.63 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
11 Stücke
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Technische Details 60N06 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO252, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 55A, Power dissipation: 60W, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Kind of channel: enhancement, Gate charge: 54nC.
Weitere Produktangebote 60N06
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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60N06 | Goford Semiconductor |
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
60N06 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO252 Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 55A Power dissipation: 60W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 54nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 60N06 |
|
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 60N06 |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO252
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 55A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 54nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO252
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 55A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH