6A100GH Taiwan Semiconductor
auf Bestellung 459 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 0.96 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.34 EUR |
| 5000+ | 0.32 EUR |
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Technische Details 6A100GH Taiwan Semiconductor
Description: DIODE GEN PURP 1KV 6A R-6, Packaging: Tape & Reel (TR), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Qualification: AEC-Q101.
Weitere Produktangebote 6A100GH
| Foto | Bezeichnung | Hersteller | Beschreibung |
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6A100GH | Hersteller : Taiwan Semiconductor |
 Diode Switching 1KV 6A 2-Pin Case R-6 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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6A100GH | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 6A R-6 Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |