6A100GH Taiwan Semiconductor
auf Bestellung 1975 Stücke:
Lieferzeit 94-98 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1 EUR |
10+ | 0.87 EUR |
100+ | 0.6 EUR |
500+ | 0.5 EUR |
1000+ | 0.43 EUR |
2000+ | 0.38 EUR |
5000+ | 0.36 EUR |
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Technische Details 6A100GH Taiwan Semiconductor
Description: DIODE GEN PURP 1KV 6A R-6, Packaging: Tape & Reel (TR), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Qualification: AEC-Q101.
Weitere Produktangebote 6A100GH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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6A100GH | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 6A R-6 Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
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